2N3553(ASI)

DescriptionThe 2N3553(ASI) is a kind of silicon planar epitaxial overlay transistor.It is available in a TO-39 metal package with the collector connected to the case.It can be used in in VHF and UHF transmitting applications. There are some characters of 2N3553(ASI) as follows.(1): the maximum co...

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SeekIC No. : 004218886 Detail

2N3553(ASI): DescriptionThe 2N3553(ASI) is a kind of silicon planar epitaxial overlay transistor.It is available in a TO-39 metal package with the collector connected to the case.It can be used in in VHF and UHF...

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Part Number:
2N3553(ASI)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Description

The 2N3553(ASI) is a kind of silicon planar epitaxial overlay transistor.It is available in a TO-39 metal package with the collector connected to the case.It can be used in in VHF and UHF transmitting applications.

There are some characters of 2N3553(ASI) as follows.(1): the maximum collector-emitter voltage(VCEX) is 65 V at the condition of IC 200 mA,VBE is -1.5 V; (2): the maximum collector-emitter voltage(VCEO) is 40 V at IC 200 mA; (3): peak collector current(ICM) is 1.0 A; (4): total power dissipation is 7.0 W at TMB is 25; (5): junction temperature(Tj) is 200; (6): transition frequency is 500 at IC is 125 mA and VCE is 28 V; (7): the maximum collector-base voltage(VCBO) is 65 V; (8): the maximum collector-emitter voltage(VCEX) is 65 V at IC 200 mA,VBE is -1.5 V; (9): the maximum collector-emitter voltage(VCEO) is 40 V at IC 200 mA; (10): collector current (DC) is 0.35 A; (11): peak collector current(ICM) is 1 A; (12): total power dissipation(PTOT) is 7 W when TMB is 25; (13): storage temperature(TSTG) is from -65 to 200; (14): junction temperature(Tj) is 200.

If you want more details about 2N3553(ASI),please download the data sheet at www.seeic.com.




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