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2N3505

Transistors Bipolar (BJT) PNP Gen Pur SS

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SeekIC No. : 00206462 Detail

2N3505: Transistors Bipolar (BJT) PNP Gen Pur SS

2N3505 Data Sheet

floor Price/Ceiling Price

US $ .37~.49 / Piece | Get Latest Price
Part Number:
2N3505
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.49
  • $.43
  • $.39
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V DC Collector/Base Gain hfe Min : 100
Configuration : Single Maximum Operating Frequency : 200 MHz
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Box    

Description

Maximum DC Collector Current :
Maximum Operating Temperature :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Packaging : Box
Package / Case : TO-18


Features:

• SILICON PLANAR EPITAXIAL PNP
   TRANSISTOR


Application

    These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps.




Specifications

TA = 25°C unless otherwise stated

Maximum Voltages 2N3503
2N3505		 2N3502
2N3504
VCBO Collector Base Voltage - 60V -45V
VCEO Collector Emitter Voltage - 60V -45V
VEBO Emitter Base Voltage -5V -5V
Maximum Power Dissipation 2N3502
2N3503		 2N3504
2N3505
PD Total Dissipation @ 25°C Case Temperature 3 W 1.3 W
PD Total Dissipation@ 25°C Free Air Temperature 0.7 W 0.4 W
TJ Storage Temperature -65°C to +200°C
  Operating Junction Temperature 200°C



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