Transistors Bipolar (BJT) PNP Gen Pur SS
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | DC Collector/Base Gain hfe Min : | 100 |
Configuration : | Single | Maximum Operating Frequency : | 200 MHz |
Mounting Style : | Through Hole | Package / Case : | TO-18 |
Packaging : | Box |
These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps.
TA = 25°C unless otherwise stated
Maximum Voltages | 2N3503 2N3505 |
2N3502 2N3504 | |
VCBO | Collector Base Voltage | - 60V | -45V |
VCEO | Collector Emitter Voltage | - 60V | -45V |
VEBO | Emitter Base Voltage | -5V | -5V |
Maximum Power Dissipation | 2N3502 2N3503 |
2N3504 2N3505 | |
PD | Total Dissipation @ 25°C Case Temperature | 3 W | 1.3 W |
PD | Total Dissipation@ 25°C Free Air Temperature | 0.7 W | 0.4 W |
TJ | Storage Temperature | -65°C to +200°C | |
Operating Junction Temperature | 200°C |