2N3503, US $ .29-.35 , Central Semiconductor, 2N3503 DataSheet download, circuit diagram from SeekIC.com

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2N3503: Transistors Bipolar (BJT) PNP Gen Pur SS

2N3503 Data Sheet

US $ .29~.35 / Piece | Get Latest Price

Part Number:: 2N3503
Mfg:: Central Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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US $2.87 - 3.12 / Piece

Transistors Bipolar (BJT) NPN Gen Pur SS

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	5 V	DC Collector/Base Gain hfe Min :	100
Configuration :	Single	Maximum Operating Frequency :	200 MHz
Mounting Style :	Through Hole	Package / Case :	TO-39
Packaging :	Box

Description

Maximum DC Collector Current :
Maximum Operating Temperature :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Packaging : Box
Package / Case : TO-39

Features:

• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR

Application

These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps.

Specifications

T_A= 25°C unless otherwise stated

Maximum Voltages		2N3503 2N3505	2N3502 2N3504
V_CBO	Collector Base Voltage	- 60V	-45V
V_CEO	Collector Emitter Voltage	- 60V	-45V
V_EBO	Emitter Base Voltage	-5V	-5V
Maximum Power Dissipation		2N3502 2N3503	2N3504 2N3505
P_D	Total Dissipation @ 25°C Case Temperature	3 W	1.3 W
P_D	Total Dissipation@ 25°C Free Air Temperature	0.7 W	0.4 W
T_J	Storage Temperature	-65°C to +200°C
	Operating Junction Temperature	200°C

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2N3503

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