2N3501UB

Features:

• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 5620
• Reference document: MIL-PRF-19500/366


Application

• General purpose
• Low power
• NPN silicon transistor


Specifications

SYMBOL	PARAMETER	RATING	UNIT
VCBO	Collector to base voltage	150	Volts
VCEO	Collector to emitter voltage	150	Volts
VEBO	Emitter to base voltage	6	Volts
IC	Collector Current, Continuous	300	mA
PT	Power Dissipation, TA = 25 Derate linearly above 25	5 3.08	W mW/°C
RJA	Thermal Resistance	325	°C/W
Tj	Junction temperature	-65 to +200
Tstg	Storage temperaturerange	-65 to +200

Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3501UBJ)
• JANTX level (2N3501UBJX)
• JANTXV level (2N3501UBJV)
• JANS level (2N3501UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request