2N3227UB

Features:

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0005
• Reference document:
MIL-PRF-19500/317


Application

• High-speed switching transistor
• Low power
• NPN silicon transistor


Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	20	Volts
Collector-emitter voltage	VCEO	40	Volts
Emitter-base voltage	VEBO	6	Volts
Power Dissipation, TC = 25 Derate linearly above 70	PT	0.4 3.08	W mW/
Thermal Resistance	RRJA	325	/W
Operating Junction Temperature	TJ	-65 to +200
Storage Temperature	Tstg	-65 to +200

Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3227UBJ)
• JANTX level (2N3227UBJX)
• JANTXV level (2N3227UBJV)
• JANS level (2N3227UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request