Features: •SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR• HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS AVAILABLE• SPACE QUALITY LEVELS OPTIONS• HIGH SPEED SATURATED SWITCHINGApplicationFor high reliablitity general purpose applications requiring smal...
2N3209DCSM: Features: •SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR• HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS AVAILABLE• SPACE QUALITY LEVELS OPTIONS• HIGH S...
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VCBO | Collector Base Voltage | 20V | |
VCEO | Collector Emitter Voltage | 20V | |
VEBO | Emitter Base Voltage | 4V | |
IC | Collector Current | 200mA | |
PD | Device Dissipation | 300mW | 500mW |
PD | Derate above 50°C | 2mW / °C | 3.3mW / °C |
Rja | Thermal Resistance Junction to Ambient | 420°C / W | 250°C / W |
Tj | Max Junction Temperature | 200°C | |
Tstg | Storage Temperature | 65 to 200°C |