2N2920

Transistors Bipolar (BJT) NPN Low Noise

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SeekIC No. : 00209626 Detail

2N2920: Transistors Bipolar (BJT) NPN Low Noise

floor Price/Ceiling Price

US $ 11.81~12.4 / Piece | Get Latest Price
Part Number:
2N2920
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~100
  • 100~500
  • Unit Price
  • $12.4
  • $11.81
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.03 A
DC Collector/Base Gain hfe Min : 20 Configuration : Dual
Maximum Operating Frequency : 60 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-78
Packaging : Box    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Configuration : Dual
DC Collector/Base Gain hfe Min : 20
Packaging : Box
Maximum Operating Frequency : 60 MHz
Maximum DC Collector Current : 0.03 A
Package / Case : TO-78


Specifications

(Tamb = 25°C unless otherwise stated)
EACH SIDE
TOTAL DEVICE
VCBO
Collector Base Voltage
60V
VCEO
Collector Emitter Voltage 1
60V
VEBO
Emitter Base Voltage
6V
500mW
IC
Continuous Collector Current
30
2.86W / °C
PD
Total Device Dissipation TAMB = 25
Derate above 25°C°C
300mW
1.72mW / °C
1.5W
PD
Total Device Dissipation TC = 25°C
Derate above 25°C
750mW
4.3mW / °C
8.6mW / °C
TSTG
Storage Temperature Range
65 to 200°C
TL
Lead temperature (Soldering, 10 sec.)
300°C
NOTES
1. Base Emitter Diode Open Circuited.



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