Transistors Bipolar (BJT) NPN Low Noise
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.03 A |
DC Collector/Base Gain hfe Min : | 20 | Configuration : | Dual |
Maximum Operating Frequency : | 60 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-78 |
Packaging : | Box |
(Tamb = 25°C unless otherwise stated) |
EACH SIDE |
TOTAL DEVICE | |
VCBO |
Collector Base Voltage |
60V |
|
VCEO |
Collector Emitter Voltage 1 |
60V |
|
VEBO |
Emitter Base Voltage |
6V |
500mW |
IC |
Continuous Collector Current |
30 |
2.86W / °C |
PD |
Total Device Dissipation TAMB = 25 Derate above 25°C°C |
300mW 1.72mW / °C |
1.5W |
PD |
Total Device Dissipation TC = 25°C Derate above 25°C |
750mW 4.3mW / °C |
8.6mW / °C |
TSTG |
Storage Temperature Range |
65 to 200°C |
|
TL |
Lead temperature (Soldering, 10 sec.) |
300°C |