Transistors Bipolar (BJT) PNP Gen Pur SS
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 75 at 100 uA at 10 V | Configuration : | Single |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-39 |
Packaging : | Box |
Ratings |
Symbol |
2N2904 |
2N2904A, L |
Unit |
Collector-Emitter Voltage |
VCEO |
40 |
60 |
Vdc |
Collector-Base Voltage |
VCBO |
60 |
Vdc | |
Emitter-Base Voltage |
VEBO |
5.0 |
Vdc | |
Collector Current |
IC |
600 |
mAdc | |
Total Power Dissipation @ TA = +250C(1) |
PT |
0.6 |
W | |
Operating & Storage Junction Temperature Range |
Tj, Tstg |
-65 to +200 |
0C |
THERMAL CHARACTERISTICS
Characteristics |
Symbol |
Max. |
Unit |
Thermal Resistance, Junction-to-Case |
RqJC |
0.29 |
0C/mW |
1) Derate linearly 3.43 W/0C for TA > +250C
2) Derate linearly 17.2 W/0C for TC > +250C