Transistors Bipolar (BJT) PNP G.P. Transistor 3 Pin
2N2907AUB: Transistors Bipolar (BJT) PNP G.P. Transistor 3 Pin
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Rating | Symbol | Rating | Unit |
Collector-Emitter Voltage | VCEO | 60 | V |
Collector-Base Voltage | VCBO | 60 | V |
Emitter-Base Voltage | VEBO | 5.0 | V |
Collector Current, Continuous | IC | 600 | mA |
Operating Junction Temperature | TJ | -65 to +200 | |
Storage Temperature | TSTG | -65 to +200 |
Technical/Catalog Information | 2N2907AUB |
Vendor | TT Electronics/Optek Technology |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 1.16W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 50nA |
Mounting Type | Surface Mount |
Package / Case | 3-LCC |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Not Applicable |
Other Names | 2N2907AUB 2N2907AUB |