Transistors Bipolar (BJT) PNP G.P. Transistor 4 Pin
2N2907AUA: Transistors Bipolar (BJT) PNP G.P. Transistor 4 Pin
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Ratings | Symbol | All Types | Unit |
Collector-Emitter Voltage | VCEO | 60 | Vdc |
Collector-Base Voltage | VCBO | 60 | Vdc |
Emitter-Base Voltage | VEBO | 0.5 | Vdc |
Collector Current | IC | 600 | mAdc |
Total Power Dissipation @ TA = +25 @ TC = +25 |
PT(1) PT (2/3) |
0.4 1.8 |
W W |
Operating & Storage Junction Temperature Range | TJ, TSTY | -65 to +200 |
Technical/Catalog Information | 2N2907AUA |
Vendor | TT Electronics/Optek Technology |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 1.16W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 50nA |
Mounting Type | Surface Mount |
Package / Case | 4-LCC |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Not Applicable |
Other Names | 2N2907AUA 2N2907AUA |