2N2907

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
Maximum DC Collector Current : 0.6 A
Package / Case : TO-18
DC Collector/Base Gain hfe Min : 35


Features:

· Radiation graphs available




Application

Designed for general purpose switching and amplifier applications.




Specifications

Parameter	Test conditions	Min	Max	Uni
BVCEO	IC = 10 mA, IB = 0	60	---	V dc
BVCBO	IC = 10 A, IE = 0	60	---	V dc
BVEBO	IE = 10 A, IC = 0	5.0	---	V dc
ICBO	VCB = 50 V, IE = 0	---	10	nA dc
hFE	IC = 150 mA dc, VCE = 10 V	100	300	---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%.




Description

Chip type 2N2907 by Semicoa Semiconductors provides performance similar to these devices.




Parameters:

Technical/Catalog Information	2N2907
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-18, Metal Case
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N2907 2N2907 497 2910 5 ND 49729105ND 497-2910-5