2N2906A

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Packaging : Box
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75
Package / Case : TO-18


Specifications

Ratings	Symbol	All Types	Unit
Collector-Emitter Voltage	VCEO	60	Vdc
Collector-Base Voltage	VCBO	60	Vdc
Emitter-Base Voltage	VEBO	5.0	Vdc
Collector Current	IC	600	mAdc
Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2)	PT(1) PT(2 / 3)	0.4 1.8	W W
Operating & Storage Junction Temperature Range	Tj, Tstg	-65 to +200	0C

1) Derate linearly 2.28 mW/⁰C for T_A > +25⁰C.
2) Derate linearly 10.3 mW/⁰C for T_C > +25⁰C.
3) For UA and UB surface mount case outlines: P_T = 1.16 W;
derate linearly 6.6mW/⁰C for T_C > +25⁰C.