DescriptionThe 29DL64DF-70PFTN is designed as one kind of 64 M-bit, 3.0 V-only Flash memory device that is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations. Features of the 29DL64DF-70PFTN are:(1)0.17 mm Proc...
29DL64DF-70PFTN: DescriptionThe 29DL64DF-70PFTN is designed as one kind of 64 M-bit, 3.0 V-only Flash memory device that is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considere...
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DescriptionThe 29DL323TE-90 is designed as one kind of 32M-bit, 3.0 V-only Flash memory that organ...
DescriptionThe 29DL323TE-90DFTN is designed as one kind of 32M-bit, 3.0 V-only Flash memory device...
DescriptionThe 29DL324BE-90NC is designed as one kind of 32M-bit, 3.0 V-only Flash memory device t...
The 29DL64DF-70PFTN is designed as one kind of 64 M-bit, 3.0 V-only Flash memory device that is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations.
Features of the 29DL64DF-70PFTN are:(1)0.17 mm Process Technology;(2)Two-bank Architecture for Simultaneous Read/Program and Read/Erase;(3)Single 3.0 V Read, Program, and Erase Minimized system level power requirements;(4)Compatible with JEDEC-standard Commands;(5)Minimum 100,000 Program/Erase Cycles;(6)High Performance 70 ns maximum access time;(7)Automatically preprograms and erases the chip or any sector;(8)Automatically programs and verifies data at specified address.
The absolute maximum ratings of the 29DL64DF-70PFTN can be summarized as:(1)Storage Temperature: -55 to +125 °C;(2)Ambient Temperature with Power Applied: -40 to +85 °C;(3)Voltage with Respect to Ground All pins except A9, OE, and RESET: -0.5 to VCC+0.5 V;(4)Power Supply Voltage: -0.5 to +4.0 V;(5)A9, OE, and RESET: -0.5 to 13.0 V;(6)WP/ACC: -0.5 to +10.5 V. If you want to know more information about the 29DL64DF-70PFTN, please download the datasheet in www.seekic.com or www.chinaicmart.com .