DescriptionThe 29DL323TE-90DFTN is designed as one kind of 32M-bit, 3.0 V-only Flash memory device that is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. Features of the 29DL323TE-90DFTN are:(1)0.23...
29DL323TE-90DFTN: DescriptionThe 29DL323TE-90DFTN is designed as one kind of 32M-bit, 3.0 V-only Flash memory device that is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate mem...
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DescriptionThe 29DL323TE-90 is designed as one kind of 32M-bit, 3.0 V-only Flash memory that organ...
DescriptionThe 29DL324BE-90NC is designed as one kind of 32M-bit, 3.0 V-only Flash memory device t...
DescriptionThe 29DL640E-90NC is designed as one kind of 8Mbit(1M x 8/512K x 16) CMOS 3.0 volt-only...
The 29DL323TE-90DFTN is designed as one kind of 32M-bit, 3.0 V-only Flash memory device that is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned.
Features of the 29DL323TE-90DFTN are:(1)0.23 mm Process Technology;(2)Single 3.0 V read, program, and erase Minimizes system level power requirements;(3)Minimum 100,000 program/erase cycles;(4)High performance 80 ns maximum access time;(5)Sector Group Protection Set function by Extended sector group protection command;(6)Fast Programming Function by Extended Command;(7)In accordance with CFI (Common Flash Memory Interface);(9)Erase Suspend/Resume.
The absolute maximum ratings of the 29DL323TE-90DFTN can be summarized as:(1)Storage Temperature: -55 to +125 °C;(2)Ambient Temperature with Power Applied: -40 to +85 °C;(3)Voltage with Respect to Ground All pins except A9, OE, RESET: -0.5 to Vcc+0.5 V;(4)WP/ACC:0.5 to +10.5 V. If you want to know more information about the 29DL323TE-90DFTN, please download the datasheet in www.seekic.com or www.chinaicmart.com