28F800B5

Features:

SmartVoltage Technology
  -Smart 5 Flash: 5 V Reads,5 V or 12 V Writes
  -Increased Programming Throughput at 12 V VPP
Very High-Performance Read
  -2-, 4-Mbit: 60 ns Access Time
  -8-Mbit: 70 ns Access Time
x8 or x8/x16-Configurable Data Bus
Low Power Consumption
  -Max 60 mA Read Current at 5 V
  -Auto Power Savings: <1 mA Typical
Standby Current
Optimized Array Blocking Architecture
  -16-KB Protected Boot Block
  -Two 8-KB Parameter Blocks
  -96-KB and 128-KB Main Blocks
  -Top or Bottom Boot Locations
Extended Temperature Operation
  -40 °C to +85 °C
Industry-Standard Packaging
  -40, 48-Lead TSOP, 44-Lead PSOP
Extended Block Erase Cycling
  -100,000 Cycles at Commercial Temp
  -10,000 Cycles at Extended Temp
Hardware Data Protection Feature
  -Absolute Hardware-Protection for Boot Block
  -Write Lockout during Power Transitions
Automated Word/Byte Program and Block Erase
  -Command User Interface
  -Status Registers
  -Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
  -Provides Low-Power Mode and Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
 - 0.6 µ ETOX IV Initial Production
  -0.4 µ ETOX V Later Production


Pinout




Specifications

Commercial Operating Temperature
      During Read/Erase/Program............ 0 °C to +70 °C
      Temperature Under Bias............. 10 °C to +80 °C
Extended Operating Temperature
     During Read/Erase/Program........ 40 °C to +85 °C
     Temperature Under Bias ............. 40 °C to +85 °C
Storage Temperature...................... 65 °C to +125 °C
Voltage on Any Pin
    (except V_CC, V_PP, A₉ and RP#)
    with Respect to GND...................... 2.0 V to +7.0 V⁽²⁾
Voltage on Pin RP# or Pin A₉
    with Respect to GND.................. 2.0 V to +13.5 V^(2,3)
V_PP Program Voltage with Respect
    to GND during Block Erase
    and Word/Byte Program............. 2.0 V to +14.0 V^(2,3)
V_CC Supply Voltage
    with Respect to GND....................... 2.0 V to +7.0 V⁽²⁾
Output Short Circuit Current...............................100 mA ⁽⁴⁾


Description

28F800B5 provides 2-, 4-, and 8-Mbit memories featuring high-density,low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically-blocked architecture, flexible voltage, and extended  cycling provide highly flexible components suitable for embedded code execution applications, such as networking infrastructure and office automation.

Based on Intel's boot block architecture, 28F800B5 enables quick and easy upgrades for designs that demand state-of-the-art technology. This family of products comes in industry- standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.