28F800B3

Features:

 Flexible SmartVoltage Technology
 -2.7 V3.6 V Read/Program/Erase
 -12 V VPP Fast Production Programming
2.7 V or 1.65 V I/O Option
 -Reduces Overall System Power
High Performance
 -2.7 V3.6 V: 90 ns Max Access Time
 -3.0 V3.6 V: 80 ns Max Access Time
Optimized Block Sizes
 -Eight 8-KB Blocks for Data,Top or Bottom Locations
 -Up to Sixty-Three 64-KB Blocks for Code
Block Locking
 -V_CC-Level Control through WP#
Low Power Consumption
 -10 mA Typical Read Current
Absolute Hardware-Protection
 -V_PP = GND Option
 -V_CC Lockout Voltage
Extended Temperature Operation
 -40 °C to +85 °C
Flash Data Integrator Software
 -Flash Memory Manager
 -System Interrupt Manager
 -Supports Parameter Storage, Streaming Data (e.g., Voice)
Automated Program and Block Erase
 -Status Registers
Extended Cycling Capability
 -Minimum 100,000 Block Erase Cycles Guaranteed
Automatic Power Savings Feature
 -Typical ICCS after Bus Inactivity
Standard Surface Mount Packaging
 -48-Ball µBGA* Package
 -48-Lead TSOP Package
 -40-Lead TSOP Package
Footprint Upgradeable
 -Upgrade Path for 4-, 8-, 16-, and 32-Mbit Densities
ETOX™ VI (0.25 µ) Flash Technology


Pinout




Specifications

Extended Operating Temperature
     During Read .......................... 40 °C to +85 °C
     During Block Erase
     and Program.......................... 40 °C to +85 °C
     Temperature Under Bias ....... 40 °C to +85 °C
Storage Temperature................. 65 °C to +125 °C
Voltage on Any Pin
     (except V_CC, V_CCQ and V_PP)
     with Respect to GND............. 0.5 V to 3.7 V⁽¹⁾
V_PP Voltage (for Block
     Erase and Program)
     with Respect to GND.....0.5 V to +13.5 V^(1,2,4)
V_CC and V_CCQ Supply Voltage
     with Respect to GND........... 0.2 V to +3.7 V⁽⁵⁾
Output Short Circuit Current.....................100 mA⁽³⁾


Description

The Smart 3 Advanced Boot Block, manufactured on Intel's latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. 28F800B3 incorporate low voltage capability(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective, monolithic code plus data storage solution. 28F800B3 will be available in 40-lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be obtained by accessing Intel's WWW page: http://www.intel.com/design/flash.