28F640P3

Features:

High performance
   -85/88 ns initial access
   -40 MHz with zero wait states, 20 ns clock-to-data output synchronous-burst read mode
   -25 ns asynchronous-page read mode
   -4-, 8-, 16-, and continuous-word burst mode
   -Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
   -1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
   -Multi-Level Cell Technology: Highest Density at Lowest Cost
   -Asymmetrically-blocked architecture
   -Four 32-KByte parameter blocks: top or bottom configuration
   -128-KByte main blocks
Voltage and Power
    -VCC (core) voltage: 1.7 V 2.0 V
    -VCCQ (I/O) voltage: 1.7 V 3.6 V
    -Standby current: 55 µA (Typ) for 256-Mbit
    -4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
    -Operating temperature: 40 °C to +85 °C
       • 1-Gbit in SCSP is 30 °C to +85 °C
    -Minimum 100,000 erase cycles per block
    -ETOX™ VIII process technology (130 nm)
Security
    -One-Time Programmable Registers:
       • 64 unique factory device identifier bits
       • 64 user-programmable OTP bits
       • Additional 2048 user-programmable OTP bits
    -Selectable OTP Space in Main Array:
       • 4x32KB parameter blocks + 3x128KB main 
        blocks (top or bottom configuration)
    -Absolute write protection: VPP = VSS
    -Power-transition erase/program lockout
    -Individual zero-latency block locking
    -Individual block lock-down
Software
    -20 µs (Typ) program suspend
    -20 µs (Typ) erase suspend
    -Intel^® Flash Data Integrator optimized
    -Basic Command Set and Extended Command Set compatible
    -Common Flash Interface capable
Density and Packaging
   -64/128/256-Mbit densities in 56-Lead TSOP package
   -64/128/256/512-Mbit densities in 64-Ball  Intel® Easy BGA package
   -64/128/256/512-Mbit and 1-Gbit densities in Intel® QUAD+ SCSP
   -16-bit wide data bus


Pinout




Specifications

Parameter	Maximum Rating	Notes
Temperature under bias	40 °C to +85 °C	1
Storage temperature	65 °C to +125 °C
Voltage on any signal (except VCC, VPP)	0.5 V to +4.1 V	2
VPP voltage	0.2 V to +10 V	2,3,4
VCC voltage	0.2 V to +2.5 V	2
VCCQ voltage	0.2 V to +4.1 V	2
Output short circuit current	100 mA	5

Description

28F640P3 is the latest generation of Intel StrataFlash^® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features of 28F640P3 include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.
The P30 product family is manufactured using Intel^® 130 nm ETOX™ VIII process technology.