28F640L30

Features: HighperformanceRead-While-Write/Erase-85nsinitialaccess-52MHzwithzerowaitstate,17nsclock-to-data outputsynchronous-burstmode-25nsasynchronous-pagemode-4-,8-,16-,andcontinuous-wordburstmode-Burstsuspend-ProgrammableWAITconfiguration-BufferedEnhancedFactoryPr...

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SeekIC No. : 004218247 Detail

28F640L30: Features: HighperformanceRead-While-Write/Erase-85nsinitialaccess-52MHzwithzerowaitstate,17nsclock-to-data outputsynchronous-burstmode-25nsasynchronous-pagemode-4-,8-,16-,andc...

floor Price/Ceiling Price

Part Number:
28F640L30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

HighperformanceRead-While-Write/Erase
-85nsinitialaccess
-52MHzwithzerowaitstate,17nsclock-to-data outputsynchronous-burstmode
-25nsasynchronous-pagemode
-4-,8-,16-,andcontinuous-wordburstmode
-Burstsuspend
-ProgrammableWAITconfiguration
-BufferedEnhancedFactoryProgramming (BufferedEFP):3.5s/byte(Typ)
-1.8Vlow-powerbufferedandnon-buffered programming@10s/byte(Typ)
Architecture
-Asymmetrically-blockedarchitecture
-Multiple8-Mbitpartitions:64Mband128Mb devices
-Multiple16-Mbitpartitions:256Mbdevices
-Four16-KWordparameterblocks:topor bottomconfigurations
-64K-Wordmainblocks
-Dual-operation:Read-While-Write(RWW)or Read-While-Erase(RWE)
-Statusregisterforpartitionanddevicestatus
Power
-1.7V-2.0VVCCoperation
- I/Ovoltage:2.2V-3.3V
-Standbycurrent:30A(Typ)
-4-Wordsynchronousreadcurrent:17mA(Typ) @54MHz
-AutomaticPowerSavings(APS)mode
Software
-20s(Typ)programsuspend
-20s(Typ)erasesuspend
- Intel®FlashDataIntegrator(FDI)optimized
-BasicCommandSet(BCS)andExtended CommandSet(ECS)compatible
-CommonFlashInterface(CFI)capable
Security
-OTPspace:
- 64uniquedeviceidentifierbits
- 64user-programmableOTPbits
- Additional2048user-programmableOTP bits
-Absolutewriteprotection:VPP=GND
-Power-transitionerase/programlockout
-Individualzero-latencyblocklocking
-Individualblocklock-down
QualityandReliability
-Expandedtemperature:25°Cto+85°C
-Minimum100,000erasecyclesperblock
-ETOX™VIIIprocesstechnology(0.13m)
DensityandPackaging
-64-,128-and256-MbitdensityinVFBGA packages
-128/0,and256/0DensityinStacked-CSP
-16-bitwidedatabus




Description

Thissectionprovidesanoverviewofthe28F640L30 featuresandcapabilitiesofthe1.8VoltIntelStrataFlash®
wirelessmemorywith3-VoltI/O(L30)device.




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