28F256A

The 28F256A is a kind of 256K (32K*8) CMOS flash memory.

There are some features on 28F256A as follows. First is flash eletrical chip-erase which is 1 second typical chip-erase. The second is quick-pulse programming algorithm which is 10 s typical byte-program and 0.5 second chip program. Then is 100,000 erase/program cycles. Next is 12.0 V±5% VPP. The fifth is high-performance read which is 120 ns maximum access time. The sixth is CMOS low power consumption which inludes 10 mA typical active current, 50A typical standby current and 0 W data retention power. The seventh is intergrated program/erase stop timer. The eighth is command register architecture for microprocessor/mirocontroller compatible write interface. The ninth is noise immunity features including ±10% VCC tolerance and maximum latch-up immunity through EPI processing. The tenth is ETOX flash nonvolatile technology which includes EPROM-Compatible process base and high-volume manufacturing experience. The last one is JEDEC-Standard pinouts which contains 32-pin PDIP and 32-lead PLCC.

What comes next is about the absolute maximum ratings of 28F256A. The operating temperature is from 0 to +70 during read and erase/program. The temperature under bias is from -10 to +80. The storage temperature is from -65 to +125. The voltage on any pin with respect to ground is from -2.0 to +7.0 V. The voltage on any pin A9 with respect to ground is from -2.0 to +13.5 V. The VPP supply voltage on any pin with respect to ground during erase/program is from -2.0 to +14.0 V. The VCC supply voltage on any pin with respect to ground is from -2.0 to +7.0 V. The output short circuit current is 100 mA. Then is about the operating conditions. The TA (operating temperature) is from 0 to 70 for read-only and read/write operations. The minimum VCC (supply voltage) is 4.5 V and the maximum is 5.50 V.