28F200BL-T

Features:

Low Voltage Operation for Very Low Power Portable Applications
   VCC e 3.0V3.6V
Expanded Temperature Range
   b20§Cto a70§C
x8/x16 Input/Output Architecture
   28F200BL-T, 28F200BL-B
   For High Performance and High Integration 16-bit and 32-bit CPUs
x8-only Input/Output Architecture
   28F002BL-T, 28F002BL-B
   For Space Constrained 8-bit Applications
Upgradeable to Intel's SmartVoltageProducts
Optimized High-Density Blocked Archit ecture
   One 16-KB Protected Boot Block
   Two 8-KB Parameter Blocks
   One 96-KB Main Block
   One 128-KB Main Block
   Top or Bottom Boot Locations
Extended Cycling Capability
   10,000 Block Erase Cycles
Automated Word/Byte Write and Block Erase
   Command User Interface
   Status Registers
   Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
   0.8 mA Typical ICC Active Current in Static Operation
Very High-Performance Read
   150 ns Maximum Access Time
   65 ns Maximum Output Enable Time
Low Power Consumption
   15 mA Typical Active Read Current
Reset/Deep Power-Down Input
   0.2 mAICC Typical
   Acts as Reset for Boot Operations
Write Protection for Boot Block
Hardware Data Protection Feature
   Erase/Write Lockout during Power
Transitions
Industry Standard Surface Mount Packaging
   28F200BL: JEDEC ROM Compatible
                       44-Lead PSOP
                       56-Lead TSOP
   28F002BL: 40-Lead TSOP
12V Word/Byte Write and Block Erase
   VPP e 12V g5% Standard
ETOXTM III Flash Technology
   3.3V Read
Independent Software Vendor Support


Pinout




Specifications

Operating Temperature
    During Read ................-20to 70°C⁽¹⁾
    During Block Erase and
    Word/Byte Write ..................0Cto70
Temperature Under Bias .............-20to 80
Storage Temperature..............-65to 125
Voltage on Any Pin
    (except V_CC,V_PP,A9 and RP)
    with Respect to GND  ............-2.0V to a7.0V(2)
Voltage on Pin RP or Pin A₉
with Respect to GND .............-2.0V to 13.5V(2, 3)

 

Description

Intel's 2-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes block-selective erasure, automated write and erase operations and standard microprocessor interface. 28F200BL-T enhances the Boot Block Architecture by adding more density and blocks,x8/x16 input/output control, very low power, very high speed, an industry standard ROM compatible pinout and surface mount packaging. The 2-Mbit Low Power Flash Family opens a new capability for 3V battery-oper-ated portable systems and allows for an easy upgrade to Intel's 4-Mbit Low Power Boot Block Flash Memory Family.

The Intel 28F200BL-T/B are 16-bit wide flash memory offerings. These high density flash memories provide user selectable bus operation for either 8-bit or 16-bit applications. The 28F200BL-T and 28F200BL-B are 2,097,152-bit non-volatile memories organized as either 262,144 bytes or 131,072 words of information. They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages. The x8/x16 pinout conforms to the industry standard ROM/EPROM pinout.

The Intel 28F002BL-T/B are 8-bit wide flash memories with 2,097,152 bits organized as 262,144 bytes of information. They are offered in a 40-Lead TSOP package, which is ideal for space-constrained portable systems.

These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified word/byte write and block erasure. The 28F200BL-T/28F002BL-T provide block locations compatible with Intel's low voltage MCS-186 family, i386TM, i486TM microprocessors. The 28F200BL-B/28F002BL-B provide compatibility with Intel's 80960KX and 80960SX families as well as other low voltage embedded microproces-sors.

The boot block includes a data protection feature to protect the boot code in critical applications. With a maximum access time of 150 ns, 28F200BL-T are very high performance low power memories which interface to a wide range of low power microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power consumption to 0.66 mW. This is critical in handheld battery powered systems such as Handy Phones. For very high speed applications using a 5V supply, refer to the Intel 28F200BX-T/B,28F002BX-T/B 2-Mbit Boot Block Flash Memory Family datasheet.

Manufactured on Intel's 0.8 micron ETOX III process, 28F200BL-T provides world class quality, reliability and cost-effectiveness at the 2-Mbit density level.