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28F200BV-T

Features: Intel SmartVoltage Technology -5 V or 12 V Program/Erase -3.3 V or 5 V Read OperationVery High-Performance Read -5 V: 60 ns Access Time -3 V: 110 ns Access TimeLow Power Consumption -Max 60 mA Read Current at 5 V -Max 30 mA Read Current at ...

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SeekIC No. : 004218207 Detail

28F200BV-T: Features: Intel SmartVoltage Technology -5 V or 12 V Program/Erase -3.3 V or 5 V Read OperationVery High-Performance Read -5 V: 60 ns Access Time -3 V: 110 ns Access ...

28F200BV-T Data Sheet

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Part Number:
28F200BV-T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Intel SmartVoltage Technology
 -5 V or 12 V Program/Erase
 -3.3 V or 5 V Read Operation
Very High-Performance Read
 -5 V: 60 ns Access Time
 -3 V: 110 ns Access Time
Low Power Consumption
 -Max 60 mA Read Current at 5 V
 -Max 30 mA Read Current at 3.3 V3.6 V
x8/x16-Selectable Input/Output Bus
 -28F200 for High Performance 16- or
32-bit CPUs
x8-Only Input/Output Architecture
 -28F002B for Space-Constrained 8-bit Applications
Optimized Array Blocking Architecture
 -One 16-KB Protected Boot Block
 -Two 8-KB Parameter Blocks
 -96-KB and 128-KB Main Blocks
 -Top or Bottom Boot Locations
Extended Temperature Operation
 40 °C to +85 °C
Extended Block Erase Cycling
 100,000 Cycles at Commercial Temp
 10,000 Cycles at Extended Temp
Automated Word/Byte Program and Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
Reset/Deep Power-Down Input
 0.2 µA ICCTypical
 Provides Reset for Boot Operations
Hardware Data Protection Feature
 Absolute Hardware-Protection for Boot Block
 Write Lockout during Power Transitions
Industry-Standard Surface Mount Packaging
 40-, 48-, 56-Lead TSOP
 44-Lead PSOP
Footprint Upgradeable to 4-Mbit and 8-Mbit Boot Block Flash Memories
ETOX™ IV Flash Technology


Pinout

Connection Diagram


Specifications

Commercial Operating Temperature
      During Read ...................................... 0 °C to +70 °C
      During Block Erase
      and Word/Byte Program.................... 0 °C to +70 °C
      Temperature Under Bias .............. 10 °C to +80 °C
Extended Operating Temperature
     ring Read ...................................... 40 °C to +85 °C
     During Block Erase
     and Word/Byte Program................ 40 °C to +85 °C
     Temperature Under Bias ............... 40 °C to +85 °C
Storage Temperature.........................65 °C to +125 °C
Voltage on Any Pin
     (except VCC, VPP, A9 and RP#)
     with Respect to GND....................... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A9
     with Respect to GND................... 2.0 V to +13.5 V(2,3)
VPP Program Voltage with Respect to GND during Block Erase
     and Word/Byte Program.............. 2.0 V to +14.0 V(2,3)
VCC Supply Voltage
     with Respect to GND......................... 2.0 V to +7.0 V(2)
Output Short Circuit Current....................100 mA (4)


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