Features: SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
65 ns Access Time
1 Million Erase Cycles per Block
30.8 MB/sec Burst Write Transfer Rate
0.48 MB/sec Sustainable Write Transfer Rate
Configurable x8 or x16 Operation
56-Lead TSOP and SSOP Type IPackages
Backwards-Compatible with 28F016SA,28F008SA Command Set
Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel 28F008SA
Page Buffer Program
2 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash TechnologyPinoutSpecificationsTemperature Under Bias ......................0°C to +80°C
Storage Temperature ...................65°C to +125°CDescriptionIntel's 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power operation, user-selectable V
PP voltage and high read/program performance, the 28F016SV enables the design of truly mobile, high performance personal computing and communications products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and 28F016SA 16-Mbit FlashFile memories), extended cycling, flexible V
CC and V
PP voltage (SmartVoltagetechnology), fast program and read performance and selective block locking, provide a highly-flexible memory component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.The 28F016SV's dual read voltage enables the design of memory cards which can be read/written in 3.3V and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor interface. The flexible block locking option enables bundling of executable application software in a Resident Flash Array or memory card. The 28F016SV is manufactured on Intel's 0.6 µm ETOX IV process technology.