28F010

Features:

Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
 10 µs Typical Byte-Program
 2 Second Chip-Program
100,000 Erase/Program Cycles
12.0 V ±5% VPP
High-Performance Read
 90 ns Maximum Access Time
CMOS Low Power Consumption
 10 mA Typical Active Current
 50 µA Typical Standby Current
 0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technology
 EPROM-Compatible Process Base
 High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
 32-Pin Plastic Dip
 32-Lead PLCC
 32-Lead TSOP
   (See Packaging Spec., Order #231369)
Extended Temperature Options


Pinout




Specifications

Operating Temperature
   During Read.................................0 °C to +70 °C(1)
    During Erase/Program................0 °C to +70 °C(1)
Operating Temperature
    During Read...........................40 °C to +85 °C(2)
    During Erase/Program............40 °C to +85 °C(2)
Temperature Under Bias............10 °C to +80 °C(1)
Temperature Under Bias............50 °C to +95 °C(2)
Storage Temperature.................. 65 °C to +125 °C
Voltage on Any Pin with
    Respect to Ground ....................2.0 V to +7.0 V(3)
Voltage on Pin A9 with
    Respect to Ground ............. 2.0 V to +13.5 V(3, 4)
VPP Supply Voltage with
    Respect to Ground
    During Erase/Program........ 2.0 V to +14.0 V(3, 4)
VCC Supply Voltage with
    Respect to Ground ....................2.0 V to +7.0 V(3)
Output Short Circuit Current........................ 100 mA(5)


Description

Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on- board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.

Extended erase and program  cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable  cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 performs 100,000 erase and program  cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.

Intel's 28F010 employs advanced CMOS circuitry for  systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to V_CC + 1 V.

With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.