28F004BX-B

Features:

x8/x16 Input/Output Architecture
   -28F400BX-T, 28F400BX-B
   -For High Performance and High Integration 16-bit and 32-bit CPUs
x8-only Input/Output Architecture
   -28F004BX-T, 28F004BX-B
   -For Space Constrained 8-bit Applications
Upgradeable to Intel's Smart Voltage Products
Optimized High-Density Blocked Architecture
   -One 16-KB Protected Boot Block
   -Two 8-KB Parameter Blocks
   -One 96-KB Main Block
   -Three 128-KB Main Blocks
   -Top or Bottom Boot Locations
Extended Cycling Capability
   -100,000 Block Erase Cycles
Automated Word/Byte Write and BlockErase
   -Command User Interface
   -Status Registers
   -Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
   -1 mA Typical ICC Active Current in Static Operation
Very High-Performance Read
   -60/80/120 ns Maximum Access Time
   -3Ð0/40/40 ns Maximum Output EnableTime
Low Power Consumption
   -20 mA Typical Active Read Current
Reset/Deep Power-Down Input
   -0.2 mAICC Typical
   -Acts as Reset for Boot Operations
Extended Temperature Operation
   - b40§Cto a85§C
Write Protection for Boot Block
Hardware Data Protection Feature
   -Erase/Write Lockout During Power Transitions
Industry Standard Surface Mount Packaging
   -28F400BX: JEDEC ROM Compatible
          44-Lead PSOP
          56-Lead TSOP
   -28F004BX: 40-Lead TSOP
12V Word/Byte Write and Block Erase
   -VPP e 12V g5% Standard
   -VPP e 12V g10% Option
ETOXTM III Flash Technology
   -5V Read


Pinout




Specifications

Commercial Operating Temperature
   During Read .................0to70⁽¹⁾
   During Block Erase
   and Word/Byte Write..............0to70
   Temperature Under Bias......... -10to 80
Extended Operating Temperature
   During Read ............... -40to 85
   During Block Erase
   and Word/Byte Write  .......... -40to 85
   Temperature Under Bias......... -40to 85
Storage Temperatu............ -65to 125
Voltage on Any Pin
    (except V_CC,V_PP,A9 and RP)
    with Respect to GND ......... -2.0V to 7.0V⁽²⁾
Voltage on Pin RP or Pin A₉
    with Respect to GND ....... -2.0V to 13.5V(2, 3)
V_PP Program Voltage with Respect
    to GND during Block Erase
    and Word/Byte Write....... -2.0V to 14.0V^{(2, 3)}
V_CC Supply Voltage
    with Respect to GND ......... -2.0V to 7.0V⁽²⁾
Output Short Circuit Current........... 100 mA⁽⁴⁾


Description

Intel's 4-Mbit Flash Memory Family is an extension of the Boot Block Architecture which includes block-selec-tive erasure, automated write and erase operations and standard microprocessor interface. The 28F004BX-B enhances the Boot Block Architecture by adding more density and blocks, x8/x16 input/out-put control, very high speed, low power, an industry standard ROM compatible pinout and surface mountpackaging. The 4-Mbit flash family is an easy upgrade from Intel's 2-Mbit Boot Block Flash Memory Family.

The Intel 28F400BX-T/B are 16-bit wide flash memory offerings. These high density flash memories provide user selectable bus operation for either 8-bit or 16-bit applications. The 28F400BX-T and 28F400BX-B are 4,194,304-bit non-volatile memories organized as either 524,288 bytes or 262,144 words of information. They are offered in 44-Lead plastic SOP and 56 Lead TSOP packages. The x8/x16 pinout conforms to the industry standard ROM/EPROM pinout.

The Intel 28F004BX-T/B are 8-bit wide flash memories with 4,194,304 bits organized as 524,288 bytes of information. They are offered in a 40-Lead TSOP package, which is ideal for space constrained portable systems.

These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified word/byte write and block erasure. The 28F400BX-T/28F004BX-T provide block locations compatible with Intel's MCS-186 family, 80286, i386TM, i486TM, i860TM and 80960CA microprocessors. The 28F400BX-B/ 28F004BX-B provide compatibility with Intel's 80960KX and 80960SX families as well as other embedded microprocessors.

The boot block includes a data protection feature to protect the boot code in critical applications. With a maximum access time of 60 ns, these 28F004BX-B devices are very high performance memories which interface at zero-wait-state to a wide range of microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power consumption to 1 mW. This is critical in handheld battery powered systems. For very low power applications using a 3.3V supply, refer to the Intel 28F400BL-T/B, 28F004BL-T/B 4-Mbit Boot Block Flash Memory Family datasheet.

Manufactured on Intel's 0.8 micron ETOX III process, the 28F004BX-B provides world class quality, reliability and cost-effectiveness at the 4-Mbit density level.