Features: •Fast Read Access Time-150 ns•CMOS Technology for Low Power Dissipation-30 mA Active-100 µA Standby•Fast Byte Write Time-200 µsor 1 ms •Data Retention >200 years•High Endurance - Minimum 104Erase/Write Cycles•Automatic Write Operation-In...
28C16A: Features: •Fast Read Access Time-150 ns•CMOS Technology for Low Power Dissipation-30 mA Active-100 µA Standby•Fast Byte Write Time-200 µsor 1 ms •Data Retention &...
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