Features: · Two-wire serial interface· Automatic word address increment EEPROM· 2K-bit (2,048-bit/256-byte) storage area· 16-byte page buffer· Hardware-based write protection for the entire EEPROM (using the WP pin)· EEPROM programming voltage generated on chip· 1,000,000 erase/write cycles· 100 y...
24LLC02: Features: · Two-wire serial interface· Automatic word address increment EEPROM· 2K-bit (2,048-bit/256-byte) storage area· 16-byte page buffer· Hardware-based write protection for the entire EEPROM (...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Conditions | Rating | Unit |
Supply voltage | VCC | 0.3 to + 7.0 | V | |
Input voltage | VIN | 0.3 to + 7.0 | V | |
Output voltage | VO | 0.3 to + 7.0 | V | |
Operating temperature | TA | 40 to + 85 | ||
Storage temperature | TSTG | 65 to + 150 | ||
Electrostatic discharge | VESD | HBM MM |
5000 500 |
V |
The 24LLC02 serial EEPROM has a 2,048-bit capacity, supporting the standard I2 C™-bus serial interface. It is fabricated using Ceramate's most advanced CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the 24LLC02 is its support for fast mode and standard mode.