200809272142351228

Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ballasting resistors• Gold metallization system• Internal input and output impedance mat...

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SeekIC No. : 004214956 Detail

200809272142351228: Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ...

floor Price/Ceiling Price

Part Number:
200809272142351228
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/16

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Product Details

Description



Features:

• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant



Specifications

Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC

15.0

A
Power Dissipation @ +25°C
PTOT
500
W
Storage Temperature
TSTG
-65 to+200
°C
Junction Temperature
TJ
200
°C



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