Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ballasting resistors• Gold metallization system• Internal input and output impedance mat...
200809272142326959: Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Parameter |
Symbol |
Rating |
Units |
Collector-Emitter Voltage |
VCES |
63 |
V |
Emitter-Base Voltage |
VEBO |
3.0 |
V |
Collector Current (Peak) |
IC |
8.0 |
A |
Power Dissipation @ +25°C |
PTOT |
330 |
W |
Storage Temperature |
TSTG |
-65 to+200 |
°C |
Junction Temperature |
TJ |
200 |
°C |