200809272141331760

Features: • No Bus Latency™ (NoBL™) architecture eliminates dead ycles between write and read cycles• Supports up to 133-MHz bus operations with zero wait tates- Data is transferred on every clock• Pin-compatible and functionally equivalent to ZBT™ evices•...

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200809272141331760: Features: • No Bus Latency™ (NoBL™) architecture eliminates dead ycles between write and read cycles• Supports up to 133-MHz bus operations with zero wait tates- Data is tran...

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Part Number:
200809272141331760
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
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Upload time: 2024/11/21

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Product Details

Description



Features:

• No Bus Latency™ (NoBL™) architecture eliminates dead ycles between write and read cycles
• Supports up to 133-MHz bus operations with zero wait tates
- Data is transferred on every clock
• Pin-compatible and functionally equivalent to ZBT™ evices
• Internally self-timed output buffer control to eliminate the eed to use OE
• Registered inputs for flow through operation
• Byte Write capability
• 3.3V/2.5V IO power supply (VDDQ)
• Fast clock-to-output times
- 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend peration
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in JEDEC-standard Pb-free 100-pin TQFP, b-free and non-Pb-free 119-Ball BGA and 165-Ball FBGA ackage.
• Three chip enables for simple depth expansion
• Automatic Power down feature available using ZZ mode or E deselect
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst Capability - linear or interleaved burst order
• Low standby power



Pinout

  Connection Diagram


Specifications

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on VDD Relative to GND........ 0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... 0.5V to +VDD
DC Voltage Applied to Outputs
in Tri-State........................................... 0.5V to VDDQ + 0.5V
DC Input Voltage ................................... 0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA



Description

The CY7C1371D/CY7C1373D is a 3.3V, 512K x 36/1M x 18 ynchronous flow through Burst SRAM designed specifically o support unlimited true back-to-back Read/Write operations ith no wait state insertion. The CY7C1371D/CY7C1373D is quipped with the advanced No Bus Latency (NoBL) logic equired to enable consecutive Read/Write operations with ata being transferred on every clock cycle. This feature ramatically improves the throughput of data through the RAM, especially in systems that require frequent Write-Read ransitions.

All synchronous inputs pass through input registers controlled y the rising edge of the clock. The clock input is qualified by he Clock Enable (CEN) signal, which when deasserted uspends operation and extends the previous clock cycle. aximum access delay from the clock rise is 6.5 ns (133-MHz evice).

Write operations are controlled by the two or four Byte Write elect (BWX) and a Write Enable (WE) input. All writes are onducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and an synchronous Output Enable (OE) provide for easy bank election and output tri-state control. To avoid bus contention, he output drivers are synchronously tri-stated during the data ortion of a write sequence.




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