200809272134399568

Features: `Access Times of 35ns (SRAM) and 150ns (EEPROM)` Access Times of 45ns (SRAM) and 120ns (EEPROM)` Access Times of 70ns (SRAM) and 300ns (EEPROM)` Packaging• 66 pin, PGA Type, 1.075 square HIP, Hermetic eramic HIP (H1) (Package 400)• 68 lead, Hermetic CQFP (G2T), 22mm (0.880 )...

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SeekIC No. : 004214951 Detail

200809272134399568: Features: `Access Times of 35ns (SRAM) and 150ns (EEPROM)` Access Times of 45ns (SRAM) and 120ns (EEPROM)` Access Times of 70ns (SRAM) and 300ns (EEPROM)` Packaging• 66 pin, PGA Type, 1.075 s...

floor Price/Ceiling Price

Part Number:
200809272134399568
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2025/3/10

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Product Details

Description



Features:

`Access Times of 35ns (SRAM) and 150ns (EEPROM)
` Access Times of 45ns (SRAM) and 120ns (EEPROM)
` Access Times of 70ns (SRAM) and 300ns (EEPROM)
` Packaging
• 66 pin, PGA Type, 1.075" square HIP, Hermetic eramic HIP (H1) (Package 400)
• 68 lead, Hermetic CQFP (G2T), 22mm (0.880")
quare (Package 509). Designed to fi t JEDEC 68 ead 0.990" CQFJ footprint (FIGURE 2)
` 128Kx16 SRAM
` 128Kx16 EEPROM
` Organized as 128Kx16 of SRAM and 128Kx16 of EPROM Memory with separate Data Buses
` Both blocks of memory are User Confi gurable as 56Kx8
` Low Power CMOS LOCK DIAGRAM IN DESCRIPTION D0-15 EEPROM Data Inputs/Outputs D0-15 SRAM Data Inputs/Outputs 0-16 Address Inputs WE#1-2 SRAM Write Enable CS#1-2 SRAM Chip Selects E# Output Enable CC Power Supply ND Ground C Not Connected WE#1-2 EEPROM Write Enable CS#1-2 EEPROM Chip Select op View IGURE 1 WSE128K16-XH1X PIN ONFIGURATION
` Commercial, Industrial and Military Temperature anges
` TTL Compatible Inputs and Outputs
` Built-in Decoupling Caps and Multiple Ground Pins or Low Noise Operation
` Weight - 13 grams typical




Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V



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