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200809272132214584

Features: • High speed switching• Capable of 8 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 12 m typ. (at VGS = 10 V)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gat...

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200809272132214584: Features: • High speed switching• Capable of 8 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 12 m typ. (at VGS = 10 V)Specificatio...

200809272132214584 Data Sheet

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Part Number:
200809272132214584
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

• High speed switching
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 12 m typ. (at VGS = 10 V)


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
Drain peak current
ID(pulse)Note1
100
A
Body-drain diode reverse drain current
IDR
25
A
Avalanche current
IAPNote 2
25
A
Avalanche energy
EARNote2
62.5
mJ
Channel dissipation
Pch Note3
30
W
Channel to Case Thermal Resistance
ch-C
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C



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