200809272120326927

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package·Light WeightSpecifications Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ...

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SeekIC No. : 004214944 Detail

200809272120326927: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package·Light We...

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Part Number:
200809272120326927
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
·Light Weight



Specifications

 
Parameter
   
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
53.5
A
ID @ VGS = 12V, TC = 100°C
Continuous Drain Current
34
IDM
Pulsed Drain Current 
214
PD @ TC = 25°C Max.
Power Dissipation
250
W
Linear
Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy 
380
mJ
IAR
Avalanche Current 
53.5
A
EAR
Repetitive Avalanche Energy 
25
mJ
dv/dt
Peak Diode Recovery dv/dt 
9.2
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55to150
oC
Pckg.Mounting Surface Temp.
300 (for 5s)
  Weight
3.3 (Typical)
g



Description

International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. R5TM have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. R5TM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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