Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package·Light WeightSpecifications Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ...
200809272120326927: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package·Light We...
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Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Parameter |
|||
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
53.5 |
A |
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
34 | |
IDM |
Pulsed Drain Current |
214 | |
PD @ TC = 25°C Max. |
Power Dissipation |
250 |
W |
Linear |
Derating Factor |
2.0 |
W/°C |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
380 |
mJ |
IAR |
Avalanche Current |
53.5 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
9.2 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55to150 |
oC |
Pckg.Mounting Surface Temp. |
300 (for 5s) | ||
Weight |
3.3 (Typical) |
g |
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. R5TM have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. R5TM retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.