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200809272104299914

Features: • Capable of 8 V gate drive• Low drive current• High density mounting• Low on-resistance DS(on) = 21 m typ. (at VGS = 10 V)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V ...

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200809272104299914: Features: • Capable of 8 V gate drive• Low drive current• High density mounting• Low on-resistance DS(on) = 21 m typ. (at VGS = 10 V)Specifications Item Symbol Rat...

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Part Number:
200809272104299914
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance DS(on) = 21 m typ. (at VGS = 10 V)


Specifications

Item
Symbol Ratings Unit

Drain to source voltage

VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID 20 A
Drain peak current

ID(pulse)Note1 80 A
Body-drain diode reverse drain current IDR 20 A
Avalanche current IAPNote 2 20 A
Avalanche energy
EARNote 		2 40 mJ
Channel dissipation Pch Note3 20 W
Channel to Case Thermal Resistance ch-C 6.25 °C/W
Channel temperature
Tch 150 °C
Storage temperature Tstg 55 to +150 °C



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