Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge·Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Dr...
200809272100183787: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge·Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light We...
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Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Parameter |
Units | ||
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
45 |
A |
ID@ VGS = 12V, TC = 100°C |
Continuous Drain Current |
28 | |
IDM |
Pulsed Drain Current |
180 | |
PD @ TC = 25°C |
Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
222 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
250 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
oC |
Pckg. Mounting Surface Temp. |
300 (for 5s) | ||
Weight |
3.3 (Typical) |
g |