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200807101814414549

Features: Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gainComplementary N- and P-channel devicesApplication Motor controlsConverters Amplifiers...

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200807101814414549: Features: Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedanc...

200807101814414549 Data Sheet

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Part Number:
200807101814414549
Supply Ability:
5000

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  • 15 Days
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Upload time: 2024/5/16

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Product Details

Description



Features:

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
 Complementary N- and P-channel devices


Application

  Motor controls
 Converters
  Amplifiers
 Switches
 Power supply circuits
  Drivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)


Specifications

Drain-to-Source Voltage .......................................................BVDSS
Drain-to-Gate Voltage.......................................................... BVDGS
Gate-to-Source Voltage ........................................................± 20V
Operating and Storage Temperature................ -55°C to +150°C


Description

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. 200807101814414549 with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, 200807101814414549 are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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