1SV278B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

The 1SV278B is designed as one kind of TOSHIBA variable capacitance diode Silicon epitaxial planar type devide that can be used in TV tuning applications. Features of the 1SV278B are:(1)High capacitance ratio: C2 V/C25 V = 6.5 (typ.); (2)Low series resistance: rs = 0.4 (typ.); (3)Excellent C-V characteristics, and small tracking error; (4)Suitable for small tuners.

The absolute maximum ratings of the 1SV278B can be summarized as:(1)Maximum (peak) reverse voltage: 30 V;(2)Reverse voltage: 30 V;(3)Maximum (peak) forward current: 300 mA;(4)Peak reverse voltage: 35 V;(5)Power dissipation: 100 mW;(6)Junction temperature: 125 °C;(7)Storage temperature: -55 to 125 °C.

The electrical characteristics of 1SV278B can be summarized as:(1)Reverse voltage: 30 V;(2)Reverse current: 10 uA;(3)Total capacitance: 14.16 to 16.25 pF;(4)Series resistance: 0.4 to 0.58 ;(5)Capacitance ratio: 5.90 to 7.28. If you want to know more information about the 1SV278B, please download the datasheet in www.seekic.com or www.chinaicmart.com .