Features: `High Capacitance Ratio:C2V/C25V=6.5(Typ.)`Low Series Resistance:rs=0.4 (Typ.)`Excellent C-V Characteristics,and Small Tracking Error.`Useful for Small Size Tuner.Specifications Parameter Symbol Value Unit Reverse Voltage VR 30 V Peak Reverse Voltage VRM 35(RL = 10 K) ...
1SV214: Features: `High Capacitance Ratio:C2V/C25V=6.5(Typ.)`Low Series Resistance:rs=0.4 (Typ.)`Excellent C-V Characteristics,and Small Tracking Error.`Useful for Small Size Tuner.Specifications Param...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Value | Unit |
Reverse Voltage | VR | 30 | V |
Peak Reverse Voltage | VRM | 35(RL = 10 K) | V |
Junction Temperature | Tj | 125 | |
Storage Temperature Range | Tstg | -55 to +125 |
The 1SV214 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device. 1SV214 has three points of features:(1)high capacitance ratio: C2V / C25V = 6.5 (typ.);(2)low series resistance: rs = 0.40 (typ.);(3)useful for small size tuner;(4)excellent C-V characteristics, and small tracking error.
The absolute maximum ratings of the 1SV214 can be summarized as:(1)reverse voltage: 30 V;(2)junction temperature: 125 ;(3)storage temperature range: -55 to +125 ;(4)peak reverse voltage: 35 V.
The electrical characteristics of 1SV214 can be summarized as:(1)reverse voltage: 30 V;(2)reverse current: 10 nA;(3)capacitance: 14.16 to 16.25 pF;(4)capacitance ratio: 5.90 to 7.15;(5)series resistance: 0.40 to 0.55 . If you want to know more information such as the electrical characteristics about the 1SV214, please download the datasheet in www.seekic.com or www.chinaicmart.com.