1SV270

Features: `High Capacitance Ratio:C1V/C4V = 2.0(Typ.)`Low Series Resistance:rs = 0.28 (Typ.)Specifications Parameter Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 Storage temperature Tstg -55 to +125 DescriptionThe 1SV270 is designed as one kind ...

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SeekIC No. : 004214738 Detail

1SV270: Features: `High Capacitance Ratio:C1V/C4V = 2.0(Typ.)`Low Series Resistance:rs = 0.28 (Typ.)Specifications Parameter Symbol Rating Unit Reverse voltage VR 10 V Junction temperature ...

floor Price/Ceiling Price

Part Number:
1SV270
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

`High Capacitance Ratio:C1V/C4V = 2.0(Typ.)
`Low Series Resistance:rs = 0.28 (Typ.)





Specifications

Parameter Symbol Rating Unit
Reverse voltage VR 10 V
Junction temperature Tj 125
Storage temperature Tstg -55 to +125







Description

The 1SV270 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device. 1SV270 has three points of features:(1)high capacitance ratio: C1V / C4V = 2.0 (typ.);(2)low series resistance: rs = 0.28 (typ.);(3)small package.

The absolute maximum ratings of the 1SV270 can be summarized as:(1)reverse voltage: 10 V;(2)junction temperature: 125 ;(3)storage temperature range: -55 to +125 .

The electrical characteristics of 1SV270 can be summarized as:(1)reverse voltage: 10 V;(2)reverse current: 3 nA;(3)capacitance: 15 to 17 pF;(4)capacitance ratio: 1.8 to 2.0;(5)series resistance: 0.28 to 0.5 . If you want to know more information such as the electrical characteristics about the 1SV270, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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