Features: `High Capacitance Ratio:C1V/C4V = 2.0(Typ.)`Low Series Resistance:rs = 0.28 (Typ.)Specifications Parameter Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 Storage temperature Tstg -55 to +125 DescriptionThe 1SV270 is designed as one kind ...
1SV270: Features: `High Capacitance Ratio:C1V/C4V = 2.0(Typ.)`Low Series Resistance:rs = 0.28 (Typ.)Specifications Parameter Symbol Rating Unit Reverse voltage VR 10 V Junction temperature ...
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Parameter | Symbol | Rating | Unit |
Reverse voltage | VR | 10 | V |
Junction temperature | Tj | 125 | |
Storage temperature | Tstg | -55 to +125 |
The 1SV270 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device. 1SV270 has three points of features:(1)high capacitance ratio: C1V / C4V = 2.0 (typ.);(2)low series resistance: rs = 0.28 (typ.);(3)small package.
The absolute maximum ratings of the 1SV270 can be summarized as:(1)reverse voltage: 10 V;(2)junction temperature: 125 ;(3)storage temperature range: -55 to +125 .
The electrical characteristics of 1SV270 can be summarized as:(1)reverse voltage: 10 V;(2)reverse current: 3 nA;(3)capacitance: 15 to 17 pF;(4)capacitance ratio: 1.8 to 2.0;(5)series resistance: 0.28 to 0.5 . If you want to know more information such as the electrical characteristics about the 1SV270, please download the datasheet in www.seekic.com or www.chinaicmart.com.