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1SS201

Application􀁺· Low forward voltage : VF (3) = 0.9V (typ.)􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)􀁺· Small total capacitance : CT = 0.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse volta...

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1SS201: Application􀁺· Low forward voltage : VF (3) = 0.9V (typ.)􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)􀁺· Small total capacitance : CT = 0.9pF (typ.)Specifications ...

1SS201 Data Sheet

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Part Number:
1SS201
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

􀁺· Low forward voltage : VF (3) = 0.9V (typ.)
􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)
􀁺· Small total capacitance : CT = 0.9pF (typ.)


Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 200 mW
Junction temperature Tj 125
Storage temperature range Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(*) Unit rating. Total rating = Unit rating *1.5.




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