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1SS200

Features: ·Low forward voltage : VF (3) = 0.92V (typ.)·Fast reverse recovery time : trr = 1.6ns (typ.)·Small total capacitance : CT = 2.2pF (typ.)Specifications Parameter Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forw...

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1SS200: Features: ·Low forward voltage : VF (3) = 0.92V (typ.)·Fast reverse recovery time : trr = 1.6ns (typ.)·Small total capacitance : CT = 2.2pF (typ.)Specifications Parameter Symbol Rating Uni...

1SS200 Data Sheet

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Part Number:
1SS200
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low forward voltage : VF (3) = 0.92V (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance : CT = 2.2pF (typ.)


Specifications

Parameter Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 (*) V
Average forward current IO 300 (*) mA
Surge current (10ms) IFSM 2 (*) mA
Power dissipation P 200 mW
Junction temperature Tj 150
Storage temperature Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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