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1N6821

Features: · Tungsten/Platinum schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low pac...

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SeekIC No. : 004213868 Detail

1N6821: Features: · Tungsten/Platinum schottky barrier· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes...

1N6821 Data Sheet

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Part Number:
1N6821
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Tungsten/Platinum schottky barrier
· Oxide passivated structure for very low leakage currents
· Guard ring protection for increased reverse energy capability
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, 1N6821) and reverse polarity (strap-to-cathode: 1N6821R)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR 45 Volts
Average Rectified Forward Current, Tc 125 IF(ave) 150 Amps
derating, forward current, Tc 125 dIF/dT 4 Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 750 Amps
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -55 to +150
Storage Temperature Range Tstg -55 to +150
Thermal Resistance, Junction to Case:
1N6821
1N6821R		 JC 0.20
0.35		 /W



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