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1N6815R

Features: • Tungsten/Platinum schottky barrier for very low VF• Oxide passivated structure for very low leakage currents• Guard ring protection for increased reverse energy capability• Epitaxial structure minimizes forward voltage drop• Hermetically sealed, low profil...

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1N6815R: Features: • Tungsten/Platinum schottky barrier for very low VF• Oxide passivated structure for very low leakage currents• Guard ring protection for increased reverse energy capabil...

1N6815R Data Sheet

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Part Number:
1N6815R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6815) and reverse polarity (strap is cathode: 1N6815R)
• TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening i.a.w. Microsemi Internal Procedure PS11.50 available


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR 45 Volts
Average Rectified Forward Current, Tc 145°C IF(ave) 25 Amps
derating, forward current, Tc 145°C dIF/dT (3.3) Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 125 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz IRRM 2 Amps
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Thermal Resistance, Junction to Case: 1N6815
1N6815R		 JC 1.25
1.35		 °C/W



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