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1N6817R

Features: • Tungsten schottky barrier• Oxide passivated structure• Guard ring protection for increased reverse energy capability• Epitaxial structure minimizes forward voltage drop• Hermetically sealed, low profile ceramic surface mount power package• Low packag...

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SeekIC No. : 004213861 Detail

1N6817R: Features: • Tungsten schottky barrier• Oxide passivated structure• Guard ring protection for increased reverse energy capability• Epitaxial structure minimizes forward voltag...

1N6817R Data Sheet

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Part Number:
1N6817R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Tungsten schottky barrier
• Oxide passivated structure
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R)
• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 100 Volts
Working Peak Reverse Voltage VRWM 100 Volts
DC Blocking Voltage VR 100 Volts
Average Rectified Forward Current, Tc 145 IF(ave) 25 Amps
derating, forward current, Tc 145 dIF/dT (3.3) Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 120 Amps
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -55 to +175
Storage Temperature Range Tstg -55 to +175
Thermal Resistance, Junction to Case:
1N6817
1N6817R		 JC 1.25
1.35		 /W



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