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1N6820

Features: · Tungsten schottky barrier for low VF· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low p...

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1N6820: Features: · Tungsten schottky barrier for low VF· Oxide passivated structure for very low leakage currents· Guard ring protection for increased reverse energy capability· Epitaxial structure minimiz...

1N6820 Data Sheet

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Part Number:
1N6820
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Tungsten schottky barrier for low VF
· Oxide passivated structure for very low leakage currents
· Guard ring protection for increased reverse energy capability
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap is anode: 1N6820) and reverse polarity (strap is cathode: 1N6820R)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR 45 Volts
Average Rectified Forward Current, Tc 125 IF(ave) 75 Amps
derating, forward current, Tc 125 dIF/dT 4 Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 500 Amps
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -55 to +150
Storage Temperature Range Tstg -55 to +150
Thermal Resistance, Junction to Case:
1N6820
1N6820R		 JC 0.50
0.65		 /W



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