1N5832

Configuration :
Recovery Time :
Maximum Power Dissipation :
Packaging :
Product : Schottky Diodes
Peak Reverse Voltage : 20 V
Forward Continuous Current : 40 A
Operating Temperature Range : - 65 C to + 150 C
Forward Voltage Drop : 0.7 V
Maximum Reverse Leakage Current : 1 uA
Max Surge Current : 800 A
Mounting Style : Stud
Package / Case : DO-5


Features:






Specifications






Description

1N5832 is a kind of schottky barrier rectifier. There are some features as follows. First is guard ring protection. The second is low forward voltage. Then is 40 Amperes. Next is 125 junction temperature. The last one is VRRM from 20 to 40 V.

What comes next is about the electrical characteristics of the 1N5832. The IF(AV) (average forward current) is 40 A at TC=100, half sine wave, RJC=1.0/W. The IFSM (maximum surge current) is 800A at 8.3 ms, half sine, TJ=125. The VFM (maximum peak forward voltage) is 0.360 V. at IFM=10A, TJ=25, 0.520 V at IFM=40A, TJ=25 and 0.980 V at IFM=125A, TJ=25. The IRM (maximum peak reverse current) of the 1N5832 is 150 mA at VRRM, TJ=100 and 20 mA at VRRM, TJ=25. The CJ (typical junction capacitance) is 2200 pF at TJ=25, VR=5 V.

The following is about the thermal and mechnical characteristics of the 1N5832. The TSTG (storage temperature range) is from -65 to +175. The TJ (operating junction temperature range) is from -65 to +125. The RJC (maximum thermal resistance) is 1.0 /W when junction to case. The maximum mounting torque is 30 inch pounds.