1N5819W

The 1N5819W has many features: 1. Low Power Loss; 2. Low Forward Voltage Drop; 3.High Efficiency; 4. High Surge Capability; 5. High Current Capability; 6. Pb / RoHS Free. Here are some mechanical datas: 1. Case: SOD-123, Plastic; 2.Terminals: Solderable per MIL-STD-202, Method 208; 3. Polarity: Cathode Band; 4.Weight: 0.01 grams (approx.).
When Ta = 25 °C, Absolute Maximum Ratings of the 1N5819W are as following mentioned: 1. Maximum Peak Repetitive Reverse Voltage (VRRM ) is 40 V; 2. Maximum Working Peak Reverse Voltage at I R = 1 mA (VRWM ) is 40 V; 3.The maximum DC Blocking Voltage (VR) of the 1N5819W is 40 V; 4. Maximum RMS Reverse Voltage (VR(RMS) ) is 28 V; 5.Maximum Average Forward Current (IF) is 1 A; 6. Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method(IFSM) is 25A; 7.Power Dissipation(Ptot) is 450 mW; 8.The Typical Thermal Resistance Junction to Ambient (RӨJA) of the 1N5819W is 222 °C/W; 9.Junction Temperature (TJ ) is 125 °C; 9.
Storage Temperature Range (TSTG) is from -55 to + 125 °C.
When Ta = 25 °C, the Electrical Characteristics of the 1N5819W are: 1.whern IR = 1.0 mA, the Reverse Breakdown Voltage is 40V; 2. when IF = 0.1 A, the Forward Voltage is 0.32V, when IF = 1.0 A, the Forward Voltage is 0.45V, when IF = 3.0 A, the Forward Voltage is 0.75V; 3. when VR = 40 V, Reverse Leakage Current is 1mA, when VR = 40 V,Ta = 100 °C, Reverse Leakage Current is 10 mA, when VR = 4 V, Reverse Leakage Current is 50.0 A; 3. VR = 4V, f = 1MHz, Typical Junction Capacitance is 110 pF.
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