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1N5819HW

Features: · Schottky Barrier Chip· Guard Ring Die Construction for Transient Protection· Low Power Loss, High Efficiency· High Surge Capability· High Current Capability and Low Forward Voltage Drop· For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applicatio...

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SeekIC No. : 004213505 Detail

1N5819HW: Features: · Schottky Barrier Chip· Guard Ring Die Construction for Transient Protection· Low Power Loss, High Efficiency· High Surge Capability· High Current Capability and Low Forward Voltage Drop·...

1N5819HW Data Sheet

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Part Number:
1N5819HW
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Description



Features:

· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application






Specifications

Characteristic
Symbol
1N5711WS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage @ IR = 1.0mA
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Average Rectified Output Current @ TL = 90°C
I0
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
25
A
Power Dissipation (Note 2)
Pd
450
mW
Typical Thermal Resistance Junction to Ambient (Note 2)
RJA
222
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +125
°C


Product Type Schottky
Part Number 1N5819HW
Max Average Rectified Current IO (A) 1
@ Terminal Temperature TT (oC) 90
Peak Repetitive Reverse Voltage VRRM (V) 40
Peak Forward Surge Current IFSM (A) 25
Forward Voltage Drop VF (V) 0.45
@ IF (A) 1
Max Reverse Current IR (mA) 1
@ VR (V) 40
Total Capacitance CT (pF) 50





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