Schottky (Diodes & Rectifiers) Schottky Barrier
1N5819: Schottky (Diodes & Rectifiers) Schottky Barrier
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Product : | Schottky Rectifiers | Peak Reverse Voltage : | 40 V |
Forward Continuous Current : | 1 A | Max Surge Current : | 25 A |
Configuration : | Single | Forward Voltage Drop : | 0.6 V |
Maximum Reverse Leakage Current : | 500 uA | Operating Temperature Range : | - 65 C to + 125 C |
Mounting Style : | Through Hole | Package / Case : | DO-41 |
Packaging : | Reel |
Product Type | Schottky |
Part Number | 1N5819 |
Max Average Rectified Current IO (A) | 1 |
@ Terminal Temperature TT (oC) | 90 |
Peak Repetitive Reverse Voltage VRRM (V) | 40 |
Peak Forward Surge Current IFSM (A) | 25 |
Forward Voltage Drop VF (V) | 0.9 |
@ IF (A) | 3 |
Max Reverse Current IR (mA) | 10 |
@ VR (V) | 100 |
Total Capacitance CT (pF) | 110 |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing |
---|---|---|---|---|---|---|---|
1N5819 | Full Production | RoHS Compliant | $0.077 | DO-41 | 2 | TAPE REEL | TBD |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Characteristic | Symbol | 1N5817 | 1N5818 | 1N5819 | Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 | 30 | 40 | V |
RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V |
Average Rectified Output Current (Note 1) @TL = 90°C | IO | 1.0 | A | ||
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 25 | A | ||
Forward Voltage @IF = 1.0A @IF = 3.0A |
VFM | 0.450 0.750 |
0.550 0.875 |
0.60 0.90 |
V |
Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C |
IRM | 1.0 10 |
mA | ||
Typical Junction Capacitance (Note 2) | Cj | 110 | pF | ||
Typical Thermal Resistance Junction to Lead (Note 1) | RQJL | 15 | °C/W | ||
Operating and Storage Temperature Range | Tj, TSTG | -65 to +150 | °C |
The 1N5819 is a vishay liteon power semiconductor.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
Features of the 1N5819 are:(1)schottky barrier chip; (2)guard ring die construction for transient protection; (3)high surge capability; (4)low power loss, high efficiency; (5)for use in low voltage, high frequency inverters,free wheeling, and polarity protection application; (6)high current capability and low forward voltage drop; (7)plastic material has UL flammability classification 94V0.
The absolute maximum ratings of the 1N5819 can be summarized as:(1)junction temperature range:-65 to 150;(2)storage temperature range:-65 to 150;(3)peak forward surge current:25 A;(4)average forward current:1A;(5)The repetitive peak reverse voltage of the 1N5819: 20V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability of the 1N5819 is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor device of the 1N5819 that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
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Technical/Catalog Information | 1N5819 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 40V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 550mV @ 1A |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500A @ 40V |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mounting Type | Through Hole, Axial |
Package / Case | DO-41, Axial |
Packaging | Cut Tape (CT) |
Capacitance @ Vr, F | - |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 1N5819 1N5819 497 6610 1 ND 49766101ND 497-6610-1 |