1N5817WB-1N5819WB

      Either of 1N5817WB or 1N5819WB is a kind of 1 A surface mount schottky barrier diode.
      When Ta = 25°C, the Absolute Maximum Ratings of the 1N5817WB-1N5819WB are: 1.1N5817WB's Reverse Voltage is 20V, the 1N5818WB's Reverse Voltage is 30V,  The reverse voltage of the 1N5817WB-1N5819WB is 40V; 2. their Average Forward Rectified Current is 1 A; 3.Non-Repetitive Peak Forward Surge Current(IFSM) is 25 A; 4.Power Dissipation(Ptot) is 450 mW; 5.Operating Temperature Range is from 55 to + 150 °C; 6.Storage Temperature Range is from  55 to 150 °C. 
      The characteristics of the 1N5817WB-1N5819WB at Ta = 25°C: 1.when IR = 1 mA, 1N5817WB's Reverse Breakdown Voltage is 20V, 1N5818WB's Reverse Breakdown Voltage is 30V, 1N5819WB's Reverse Breakdown Voltage is 40V; 2.when VR = 20 V/30V/40V, Reverse Voltage Leakage Current of them is 1mA,  when VR = 4 V. The reverse voltage leakage current of the 1N5817WB-1N5819WB is 0.05mA, when at VR = 6 V, their Reverse Voltage Leakage Current is 0.075mA; 3.when IF = 0.1 A, Forward Voltage is 0.45V, when IF = 1 A, Forward Voltage is 0.5V; 4.Diode Capacitance at VR = 4 V, f = 1 MHz is  - 120 pF.
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