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1N5817S

Features: ·Metal-Semiconductor junction with guard ring·Epitaxial construction·Low forward voltage drop,low switching losses·High surge capability·For use in low voltage,high frequency inverters free wheeling,and polarity protection applications·The plastic material carries U/L recognition 94V-0Sp...

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SeekIC No. : 004213492 Detail

1N5817S: Features: ·Metal-Semiconductor junction with guard ring·Epitaxial construction·Low forward voltage drop,low switching losses·High surge capability·For use in low voltage,high frequency inverters fre...

1N5817S Data Sheet

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Part Number:
1N5817S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

·Metal-Semiconductor junction with guard ring
·Epitaxial construction
·Low forward voltage drop,low switching losses
·High surge capability
·For use in low voltage,high frequency inverters free wheeling,and polarity protection applications
·The plastic material carries U/L recognition 94V-0


Specifications

PARAMETER SYMBOL 1N5817S 1N5818S 1N5819S UNITS
Maximum Recur rent Peak Reverse Vol tage VRRM 20 30 40 V
Maximum RMS Vol tage VRMS 14 21 28 V
Maximum DC Blocki ng Vol tage VDC 20 30 40 V
Maximum average forw ard rectified current
9.5mm lead length,         @TA=75		 I F(AV) 1.0 A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=70		 IFSM 25.0 A
Maximum instantaneous forw ard voltage @ 1.0A
(Note 1) @ 3.0A		 VF 0.45
0.75		 0.55
0.875		 0.60
0.90		 V
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100		 IR 1.0
10.0		 mA
Typical junction capacitance (Note2)   110 pF
Typical thermal resistance (Note3) RJA 50 /W
Operating junction temperature range Tj - 55 ---- + 125
Storage Temperature Range TSTG - 55 ---- + 150
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient


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